4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Free Standing GaN Single Crystal Substrates. PAM XIAMEN offers Free Standing GaN Single Crystal Substrates with LED grade and LD grade for research or mass production, and our GaN crystal substrates has low dislocation density<=10^5 /cm2 without visible micro defects, the substrate [...]
PAM XIAMEN offers Conductive Ceramic Substrates. 8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground 8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished Conductive Ceramic Target (1″ Dx 0.3 mm t ) Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±0.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28.5 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 11 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 9-11 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 8-12 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 4±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 5 n- Si:P 1.5±10% N/N/N/N+ 4″Øx525μm n- [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (001) BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains) BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains) BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains) BaTiO3 [...]
PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1 180 ± 5.0 °, 18.00 ± 2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 340 ± 10 µm 2 4 DSP Antimony N+ 100 32,5 [...]
