4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.Main Specificationsdimensional tolerance： Dia：< +/-0.025 mm ,length: < +/-0.5 mmflatness： λ/8 @633nmSurface fineness： 10/5flatness： 20 arc sec.verticality： 5 arc minorientation： <111> crystalline direction,< +/-0.5°coating film： AR coating, HR Coatingreflect： R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,clear aperture： >95% central areawavefront distortion： <7mm diameter : <λ/8 per inch @ 633nm,7mm diameter : <λ/10per inch @ 633nmPublications related to YAG laser crystals: [1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)[2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
New graphene fabrication method uses silicon carbide templateGraphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
GaInP/InP epi wafer We can offer 2″ GaInP/InP epi wafer as follows: 2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um, InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is [...]
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layersWe investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ [...]
Highlights •The validity of comparing DC and RF HTOL test results is a key issue in reliability testing. •We investigate whether DC and RF self heating, and therefore channel temperature, are equivalent. •For this purpose, an experimentally validated electrothermal model has been developed. •Channel temperature is found to [...]
