4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
X-ray response of polycrystalline – CdZnTe X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon [...]
PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]
PAM XIAMEN offers 150mm&200mm Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 150 N Phos CZ -100 1-20 180-200 P/P PRIME 150 N Phos CZ -100 1-100 500-550 P/P PRIME 150 N Phos CZ -100 1-100 500-600 P/E TEST 150 N Phos CZ -100 1-100 650-700 P/E/DTOx PRIME 150 N Phos CZ -100 1-100 650-700 P/E/Ni PRIME 150 N Phos CZ -100 1-20 650-700 P/E/OX PRIME 150 N Phos CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 180-200 P/P PRIME 150 P Boron CZ -100 1-100 500-550 P/P PRIME 150 P Boron CZ -100 1-100 500-600 P/E TEST 150 P Boron CZ -100 .001-.005 650-700 P/E PRIME 150 P Boron CZ -100 1-100 650-700 P/E/DTOx PRIME 150 P Boron CZ -100 1-100 650-700 P/E/Ni PRIME 150 P Boron CZ -100 1-20 650-700 P/E/OX PRIME 150 P Boron CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 950-1050 P/E PRIME 150 P Boron CZ -100 1-20 950-1050 P/P PRIME 150 Undoped VGF -100 >1E7 500-600 P/P 150 Undoped VGF -100 >1E7 500-600 P/P 150 N Si VGF -100 650-700 P/E PRIME 150 P Zn VGF -100 650-700 P/E PRIME 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 610-660 P/P EPI 150 Si Undoped VGF -100 >1E7 650-700 P/E PRIME 150 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Round Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Shipping Cassette ePak Holds25Wafers Clean Room 200 N Phos CZ -100 1-20 700-750 P/E/OX PRIME 200 P Boron CZ -100 1-100 600-800 P/E TEST 200 P Boron CZ -100 1-20 700-750 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
Precipitation in low temperature grown GaAs The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]
