5-3-3 System Benefits of High-Power High-Temperature SiC Devices
Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary
improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with
distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial
jet-aircraft weight savings, reduced [...]
2018-06-28meta-author
5-5-1 Choice of Polytype for Devices
As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
2018-06-28meta-author
5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
2018-06-28meta-author
5-5-6 SiC Device Packaging and System Considerations
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear [...]
2018-06-28meta-author
2-31.N type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
5-4-3 Growth of Hexagonal Polytype SiC Wafers
In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
2018-06-28meta-author