PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
4″
1000
P/E
<0.01
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° CW from Primary
n-type Si:P
[110] ±0.5°
4″
500
P/P
3-10
SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
n-type Si:P
[110] ±0.3°
4″
525
P/P
3-10
SEMI [...]
2019-03-05meta-author
Analytical model for event reconstruction in coplanar grid CdZnTe detectors
Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction [...]
5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
SiC devices are made from silicon carbide(SiC) wafers. So, here comes a question: how to obtain a silicon carbide wafer? Generally, a SiC wafer is cut from cylindrical SiC boules. As for the cutting process, methods for cutting silicon carbide ingots are introduced here.
A diamond [...]
2021-04-27meta-author
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction.
Field effect transistor
Type
Name
Principle
FET
JFET
Junction
PN junction
MOSFET
Metal oxide semiconductor
MESFET
Metal semiconductor
Schottky junction
MODFET
Modulation doping
HEMT
High electron mobility
In fact, a Schottky junction can be realized through another structure.
Definitions of Junctions
Starting from [...]
2021-04-02meta-author