Tag - Nitride Semiconductor Wafer

Nitride Semiconductor Wafer

Nitride Semiconductor WaferFree-standing Gallium Nitride  Item No.TypeOrientationThickness  GradeMicro Defect DensitySurfaceUsable area           N-Type   PAM-FS-GaN50-N2″ N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN45-Ndia.45mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN40-Ndia.40mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN38-Ndia.38mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN25-Ndia.25.4mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN15-N14mm*15mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN10-N10mm*10.5mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN5-N5mm*5.5mm, N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  SEMI-INSULATING   PAM-FS-GaN50-SI2″ N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN45-SIdia.45mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN40-SIdia.40mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN38-SIdia.38mm,N type0°±0.5°300±25umA/B0/<2/cm2P/P or P/L>90%  PAM-FS-GaN25-SIdia.25.4mm,N [...]