PAM-XIAMEN offers Gallium Nitride wafer substrate for UHB-LED,Gallium Nitride wafer,LD and other semiconductor devices.
Silicon Carbideï¼ˆSiC) Wafers PAM-XIAMENÂ offers Silicon Carbide crytal wafers and epitaxy,which is used for Optoelectronic Devices,High Power Devices,High Temperature Devices,High Frequency Power Devices
PAM-XIAMEN offers Gallium Arsenide wafer substrate and epitaxy for LED,LD and Microelectronics applications
PWAMÂ offers semiconductor materials,(Ge)Germanium Single Crystals and Wafers grown by VGF / LEC
PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.
The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.
PAM-XIAMEN Offers photoresist plate with photoresist and photomask, and provide Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection.
12″ Prime Grade Silicon Wafer
PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.
12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )
PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.
12″ Test Grade Silicon Wafer
PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.
Epi Wafer for Laser Diode
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
Float-Zone Mono-Crystalline Silicon
PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Wafer Foundry Services
PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy,
PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.
Test Wafer Monitor Wafer Dummy Wafer
As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Cz Mono-Crystalline Silicon
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
Epitaxial Silicon Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.
PAM-XIAMEN Offers photoresist plate with photoresist