PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-05meta-author
Gallium arsenide single crystal growth method of PAM-XIAMEN products is liquid-sealed straight pull method (LEC), vertical Bridgman method (VB), or vertical gradient solidification (VGF), which are current mainstream industrial growth methods. Here is a brief introduction for the GaAs single crystal growth method.
1. LEC for Gallium [...]
2021-06-22meta-author
GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH
After more than four years of often turbulent negotiations to expand the Information Technology Agreement (ITA), tariffs on roughly $1.3 trillion in trade in tech products finally start marching to zero today. [...]
2016-07-29meta-author
PAM-XIAMEN offers PBN crucibles
PBN crucible (L: 160.3mm)
PBN crucible(L160.3mm)
PBN crucible (L: 157.5mm)
PBN crucible(L157.5mm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-13meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-04meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author