PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[211] ±0.1°
4″
275
P/P
FZ >3,000
SEMI Prime, TTV<2μm
Intrinsic Si:-
[111] ±0.5°
4″
500
P/P
FZ >25,000
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
525
P/E
4-6
SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF
p-type Si:B
[110]
4″
525
P/E
2-10
PF<111> SF 109.5°
p-type Si:B
[100]
4″
300
P/E
800-5,400
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
10-20
SEMI Prime
p-type Si:B
[100]
4″
3000
P/E/P
10-15
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
250
P/E
8-12
SEMI Prime
p-type Si:B
[100]
4″
275
P/P
7-14
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
300
P/E
7-14
SEMI Prime, TTV<5μm
p-type [...]
2019-03-05meta-author
In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
2019-12-30meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-17meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author
Why are the wafers provided by PAM-XIAMEN round? Because the manufacturing process determines that it is round. Take the production process of silicon wafers as an example: The purified high-purity polysilicon is spin-grown on a seed. After the polycrystalline silicon is melted, put it [...]
2022-05-26meta-author