PAM XIAMEN offers Single crystal CdWO4.
CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes.
Structure
Lattice (A)
Melting Point oC
Density g/cm
Hardness (Mohn)
Thermo expansion
Refractive indexEmission wavelength (nm )
Emission wavelength [...]
2019-04-18meta-author
With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market [...]
2024-04-07meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (111)
BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
2019-04-17meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
A Glance of GaAs Wafer Market
According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for [...]
2018-09-05meta-author
At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as [...]
2023-02-01meta-author