A comparative study of the bonding energy in adhesive wafer bonding
Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
2018-07-17meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrate (100)
BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
2019-04-17meta-author
PAM XIAMEN offers NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Product Information: Crystals can be customized
Formulation: Ca4YO(BO3)3 (YCOB)
Size: from 5 x 5 mm to 50 x 50 mm
Thickness: 50 ~ 40 mm
Optical Homogeneity: δn < 10-5 cm-1
Transparency Range: 202 ~ 25000 nm
Surface Finish: 1/8 λ
Surface [...]
2019-03-11meta-author
AlN single crystal materials are available, please refer to the product specifications: https://www.powerwaywafer.com/aln-substrate.html. For more product information or inquiries, please contact our sales team with victorchan@powerwaywafer.com.
At present, people have used AlN to prepare high Q-value resonant cavities and low loss waveguides. It has also been reported to [...]
2024-04-28meta-author
You can buy polycrystalline silicon wafer from the polycrystalline silicon manufacturers PAM-XIAMEN. Poly crystal silicon is a form of elemental silicon. Polysilicon wafer is the foundation of the microelectronics industry and the photovoltaic industry. As a high-tech product, it spans multiple disciplines and fields of chemical machinery, electronics, industry, metallurgy, etc. [...]
2019-02-26meta-author
We offer GaAs Epitaxial Wafers for Schottky Diode as follows:
1. GaAs Schottky Diode Epi Structures
No.1 GaAs Schottky Diode Epiwafer
Epitaxial Structure PAM210319
No.
Material
Composition
Thickness Target(um)
Thickness Tol.
C/C(cm3) Target
C/C Tol.
Dopant
Carrrier Type
4
GaAs
1.00
±10%
>5.0E18
N/A
Si
N++
3
GaAs
0.28
±10%
2.0E17
±10%
Si
N
2
Ga1-xAlxAs
x=0.50
1
±10%
—
N/A
—
—
1
GaAs
0.05
±10%
—
N/A
—
—
Substrate: 2”,3”,4″
No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode
PAM210326 -SDE
No.
Material
Thickness
Doping
Doping Concentration
3
GaAs schottky contact layer
–
n
–
2
GaAs ohmic contact layer
–
–
5×10^18 cm-3
1
Low temperature GaAs
2um
–
–
0
Semi-insulating GaAs (100) [...]