The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate.
Main Parameters
Crystal structure
M3
Unit cell constant
a=5.147 Å
Melt point(℃)
2700
Density(g/cm3)
6
Hardness
8-8.5(mohs)
Purity
99.99%
Thermal expansion(/℃)
10.3×10-6
Dielectric constants
ε=27
Growth method
arcs
Size
10×3,10×5,10×10,15×15,,20×15,20×20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon [...]
2019-03-15meta-author
PAM XIAMEN offers Multilayer Graphene on Nickel foil: 2″”x2″” and Pyrolytic Graphite Substrate & Foam.
Isomolded Graphite Plate, Fine Ground, 0.125″T x 4″W x 4″L for Fuel Cell
Pyrolytic Graphite Substrate, C axis Textured, 10x10X0.5 mm, One Side Polished
Pyrolytic Graphite Substrate, C axis Textures, 1″W x [...]
2019-05-06meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]
2019-03-07meta-author
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
2021-04-26meta-author
Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2)
In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech [...]
2016-05-10meta-author