GaP Wafer

Xiamen Powerway offers GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
  • Description

Product Description

Xiamen Powerway offers GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR).

Specs of GaP Wafer and Substrate
Conducion Type N-type
Dopant S doped
Wafer Diameter 50.8+/-0.5mm
Crystal Orientation (111)+/-0.5°
Flat orientation 111
Flat length 17.5+/-2mm
Carrier Concentration (2-7)x10^7/cm3
Resistivity at RT 0.05-0.4ohm.cm
Mobility 100cm²/V.sec
Etch Pit Density 3*10^5/cm²
Laser Marking upon request
Suface Fnish P/E
Thickness 250+/-20um
Epi Ready Yes
Package Single wafer container or cassette

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