PAM XIAMEN offers MgAl2O4 ( spinel ) single crystals.
MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. [...]
2019-05-10meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
37
p- Si:B
35±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
16.5
n- Si:P
12.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
13±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7±1
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
14.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
p- Si:B
80.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
n- Si:P
27±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
105
p- Si:B
0.0035±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
26
n- Si:P
5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10.15
n- Si:P
3.8±0.5
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
6.8±0.8
n- Si:P
0.55±0.15
N/N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
16.5
n- Si:P
35 ±10%
N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
19±1.3
n- Si:P
25±5
N/N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
54.5±3.6
n- Si:P
4.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
20
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
20
n- Si:P
0.09 ±10%
N/N+
4″Øx400μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers Mg – Metal Foil.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg ) [...]
2019-05-08meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-23meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author