5-3-3 System Benefits of High-Power High-Temperature SiC Devices
Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary
improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with
distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial
jet-aircraft weight savings, reduced [...]
2018-06-28meta-author
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium.
Refractive index is the basic property of optical crystals, and it is an important parameter [...]
2018-06-28meta-author
2-1.Wafer Diameter
The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1″), 50.4mm (2″), 76.2mm (3″), 100mm (4″), 125mm(5″), 150mm (6″), 200mm (8″), and [...]
2018-06-28meta-author
5-6-4-2 SiC High-Power Switching Transistors
Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
2018-06-28meta-author
2-12.Edge Exclusion
The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and [...]
2018-06-28meta-author
3-5. Backside Cleanliness
Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
2018-06-28meta-author