5-4-3 Growth of Hexagonal Polytype SiC Wafers
In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
2018-06-28meta-author
2-1.Wafer Diameter
The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1″), 50.4mm (2″), 76.2mm (3″), 100mm (4″), 125mm(5″), 150mm (6″), 200mm (8″), and [...]
2018-06-28meta-author
2-27.BOW
Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
2018-06-28meta-author
3-1. Large Point Defects
Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
2018-06-28meta-author
5-6-1 SiC Optoelectronic Devices
The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics.
6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices
to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
2018-06-28meta-author
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology
The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–
semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational
device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme
usefulness and success of [...]
2018-06-28meta-author