PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam (mm) | Material Dopant | Orient. | Thck (μm) | Surf. | Resistivity Ωcm | Comment |
6″ | p–type Si:B | [110] ±0.5° | 390 ±10 | C/C | >10 | Prime, 2Flats, Empak cst |
6″ | p–type Si:B | [110] ±0.5° | 500 | P/E | FZ >10,000 | Prime, 2Flats, Empak cst, TTV<5μm |
6″ | p–type Si:B | [110] ±0.5° | 200 | P/P | FZ 1–2 | Prime, 2Flats, Empak cst |
6″ | p–type Si:B | [110] ±0.5° | 200 | P/P | FZ 1–2 | SEMI Prime, 2Flats, Empak cst |
6″ | p–type Si:B | [110] ±0.5° | 200 | P/P | FZ 1–2 | SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge |
6″ | n–type Si:P | [110] ±0.5° | 500 | P/P | FZ >9,600 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs |
6″ | n–type Si:P | [110] ±0.5° | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs |
6″ | n–type Si:P | [110] ±0.5° | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs |
6″ | Intrinsic Si:– | [110] | 500 | P/P | FZ >20,000 | SEMI Test (Both sides with defects), 2Flats @ [111] — Secondary 70.5° CCW from Primary, Empak cst |
6″ | Intrinsic Si:– | [110] ±0.5° | 500 | P/E | FZ >15,000 | Prime, 2Flats, Empak cst |
6″ | Intrinsic Si:– | [110] ±0.5° | 500 | P/E | FZ >15,000 | Test, Small Surface Defects, 2Flats, Empak cst |
6″ | p–type Si:B | [110] ±0.25° | 525 | P/E | 5–10 | SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst |
6″ | p–type Si:B | [110] ±0.25° | 525 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst |
6″ | p–type Si:B | [110] ±0.5° | 750 | P/E | 1–100 | SEMI Prime (back–side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm |
6″ | p–type Si:B | [110] ±0.5° | 380 | P/P | 1–30 | SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst |
6″ | n–type Si:P | [110] ±0.5° | 525 | P/P | 20–80 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
6″ | n–type Si:P | [110] ±0.5° | 500 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers |
6″ | n–type Si:P | [110] ±0.2° | 525 | P/E | 3–10 | SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst |
6″ | n–type Si:P | [110] ±0.3° | 525 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers |
6″ | n–type Si:P | [110] ±0.3° | 525 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |
6″ | n–type Si:P | [110] ±0.5° | 525 | P/E | 3–9 | SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst |
6″ | n–type Si:P | [110] ±0.5° | 525 | P/E | 3–9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
6″ | n–type Si:P | [110] ±0.3° | 525 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |
6″ | n–type Si:Sb | [110] ±0.5° | 525 | P/P | 0.01–0.02 {0.0176–0.0180} | Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
6″ | n–type Si:As | [110] ±0.5° | 275 | P/P | 0.001–0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |
Secondary at 70.5°±5° CW from Primary, Empak cst |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.