PAM XIAMEN offers Silicon Wafer Thickness:1000μm.
Silicon Wafer ,6in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm, Thickness 1000μm, SSP,
PRIME -Si Wafers, Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all wide band gap [...]
2020-09-22meta-author
PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Ce:Lu2SiO5 substrate (001) 10x10x0.5 mm, 2sp [...]
2019-05-08meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
280
P/P
1-5
SEMI Prime,
Si:P
[100-6°]
2″
300
P/E
1-5
SEMI Prime,
n-type Si:P
[100]
2″
350
P/P
1-50
Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P
[100] ±1°
2″
400 ±15
P/P
1-10
SEMI Prime, TTV<3μm, Empak cst
n-type Si:P
[100]
2″
3175
P/E
1-3
Prime, NO Flats, Individual cst
n-type Si:P
[100] ±1.0°
2″
6000
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
300
P/P
0.8-1.0
SEMI Prime,
n-type Si:Sb
[100]
2″
300
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[100]
2″
500
P/P
0.01-0.02
SEMI Prime, , in [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
325
P/E
FZ 100-200
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
FZ 7,000-10,000
SEMI Prime
p-type Si:B
[100]
3″
350
P/P
FZ 1-5
SEMI Prime
p-type Si:B
[100]
3″
160 ±10
P/P
FZ 0.5-10.0
SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
p-type Si:B
[100]
3″
890 ±13
P/P
FZ 0.5-10.0
SEMIt, TTV<8μm
p-type Si:B
[111] ±0.5°
3″
380
P/E
FZ 8,000-10,000
SEMI TEST (has scratches), in hard cst
p-type Si:B
[111] ±0.5°
3″
475
P/E
FZ >4,400
SEMI Prime, TTV<5μm
p-type Si:B
[111] ±0.25°
3″
400
P/E
FZ >100
SEMI Prime
n-type Si:P
[100]
3″
380
P/P
FZ 7,000-18,000
SEMI Prime
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers 8″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
8″
725
P/E
FZ 2,000-6,000 {2,500-3,700}
SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm
p-type Si:B
[100]
8″
725
P/E
8-12
SEMI notch Prime, TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.1-100.0
TEST grade, SEMI notch,TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.005-0.010
Prime, SEMI notch,TTV<4µm
n-type Si:P
[100]
8″
725
P/P
1-2
SEMI notch Prime, Up to 200 wafers available
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in [...]
2019-03-04meta-author