Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW).
To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]
2017-07-04meta-author
PAM XIAMEN offers YAlO3 Single crystal.
YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching.
Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]
2019-05-21meta-author
III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has [...]
2022-07-29meta-author
GaAs (gallim arsenide) epitaxial wafer with specific growth for high voltage (HV) diode stacks can be provided by PAM-XIAMEN. Gallium arsenide structure provides required power density, efficiency and reliability for extremely compact systems. GaAs diode wafers meet the requirements for power electronics in modern [...]
2022-01-28meta-author
PAM XIAMEN offers 6″CZ Si Wafer with low LPD
Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
Absorption coefficient of DSP silicon substrate [...]
2020-06-15meta-author