Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]
2019-07-04meta-author
PAM XIAMEN offers 6″ FZ Silicon Ignot. 6″ Silicon Ingot FY37b. 11.817Kg Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ Intrinsic undoped Si:-[100]±2.0°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, Length: 286mm For more information, please visit our website: [...]
2019-07-03meta-author
PAM XIAMEN offers single crystal LiTaO3. LiTaO3 X-cut LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp LiTaO3, 4″ wafer, specific parameters as follows: 4″ LT Wafer Specification Diameter 100.0±0.5mm Orientation Flat (OF) 30±2mm Second Refer. Flat [...]
2019-05-08meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±0.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28.5 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 11 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 9-11 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 8-12 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 4±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 5 n- Si:P 1.5±10% N/N/N/N+ 4″Øx525μm n- [...]
2019-03-08meta-author
PAM XIAMEN offers TiO2(Rutile) substrates. Rutile ( TiO2) single crystal is one of the most suitable materials used for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high refractive index. Compared to [...]
2019-05-20meta-author