Study Spin Phonon Interactions in Silicon Carbide by Gaussian Acoustics

Study Spin Phonon Interactions in Silicon Carbide by Gaussian Acoustics

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Hybrid quantum systems can utilize quantum information for various forms of practice, such as quantum photons for long-distance transmission, spin behavior for information storage, and microwave superconducting circuits for computation. In hybrid quantum systems, the coherent exchange of quantum information between optical active defect spins and mechanical resonators provides a pathway for coupling photons to microwave frequency phonons. Recent studies have shown that optically active defect spins (such as neutral double vacancies) in SiC have long-lived spin states, which can be used for various quantum controls and support spin photon interfaces compatible with quantum entanglement protocols. Importantly, SiC is a piezoelectric material that currently supports mature manufacturing processes to produce high-quality microelectromechanical systems (MEMS). Although progress has been made in mechanical research on coupled spin in similar defect systems, such as single spin, strain tuning, and mechanical driving behavior at the nitrogen vacancy center of diamond in coherent sensing, defects in SiC are still a better choice for solving the problem of strong spin phonon coupling in mechanical materials.

The hybrid spin mechanical system provides a great platform for integrating quantum registers and sensors. To effectively create and control this system, it is necessary to have a comprehensive understanding of the various spin and mechanical components and their interactions. At present, SiC point defect materials are advantageous candidates for high-quality mechanical integrated resonators, and wafer scale material spin registers prepared using SiC often have characteristics such as long lifespan and low loss.

Researchers demonstrated Gaussian focusing of surface acoustic waves on SiC, characterized using X-ray diffraction imaging technology, and provided direct strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, researchers have provided more complete spin strain coupling diagrams for various defects in SiC materials with C3v symmetry, revealing the importance of shear strain in enhancing spin mechanical coupling device development. At the same time, researchers have demonstrated full optical detection of acoustic paramagnetic resonance under non micro wave magnetic fields, as well as mechanically driven Autler Townes splitting and magnetic forbidden Rabi oscillations. The above experimental results provide a basis for controlling the complete strain of the three-level spin system.

Fig. 1 Gaussian SAW resonator for strain focusing

Fig. 1 Gaussian SAW resonator for strain focusing: a. Geometric diagram of SAW device fabrication on 4H-SiC substrate sputtered with AlN; b. Optical micrograph at the acoustic focal point of a Gaussian SAW resonator, with red lines indicating the out of plane displacement of the wave; c. Measurement of single port reflection amplitude (blue) and phase (red) in the rotation experiment; d&e. a mechanical mode similar to Gaussian SAW resonators.

Fig. 2 Optical detection of acoustic paramagnetic resonance in SiC

Fig. 2 Optical detection of acoustic paramagnetic resonance in SiC: a. Energy level diagram; b. Upper: Pump probe sequence during magnetic field modulation; Below: The photoluminescence (PL) contrast at 30K when the cavity resonance is turned on and off by electrical excitation; c. The functional relationship between the integrated photoluminescence contrast of resonance and the lateral position of SAW resonators.

Fig. 3 Coherent mechanical drive of kk rotation ensemble

Fig. 3 Coherent mechanical drive of kk rotation ensemble: a. Double byte ground state diagram of magnetic and electromechanical drives; b. Autler Townes measurement of kk rotation ensemble at 30 K temperature; c. The mechanical transition rate obtained from the splitting of Autler Townes (AT) is linearly fitted with the square root of the driving power value; d. A pulse sequence of mechanically driven Rabi oscillations; e. The mechanical driven Rabi oscillations are~400, 100 and 25 mW, respectively.

Fig. 4 Comparison of spatial mapping mechanical spin drive rate and defects

Fig. 4 Comparison of spatial mapping mechanical spin drive rate and defects: a. The Autler Townes splitting of the kk-1 subclass is plotted as a function of the horizontal position x=0; b. The mechanical transformation rate is plotted as a function of the longitudinal position at y=0; c. Strain of SAW modeled by COMSOL Multiphysics; d. Measurement of Autler Townes splitting of kk, hh, and PL6 at different microwave frequencies.

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