Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
2021-06-11meta-author
Industrial diamond window blanks with optical transmissivity for IR-applications are commercially available. The applicable wavelengths of current diamond optical window components basically include all wavelengths from X-ray, deep ultraviolet to microwave. Therefore, there is a great significance for the development of optical windows/fairings used [...]
2021-10-19meta-author
At present, Group III compound semiconductor materials, silicon carbide and oxide semiconductor materials are the mainly third-generation semiconductor materials. Among them, Group III compound semiconductor materials are commonly gallium nitride materials and aluminum nitride materials; oxide semiconductor materials mainly include zinc oxide, gallium oxide [...]
2021-04-06meta-author
Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm.
A high crystal quality GaN can be gained by depositing [...]
2020-03-18meta-author
PAM XIAMEN offers silicon wafers that we have with a (211) orientation.
Item
Type/Dopant
Orient.
Dia.
Thick (μm)
Surf.
Res Ωcm
Comment
PAM3037
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
PAM3038
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
Prime, 1Flat, Empak cst
PAM3039
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ >50
Prime, 1Flat, Empak cst
PAM3040
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime, 1Flat, Empak [...]
2019-02-22meta-author
AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]
2021-09-10meta-author