PAM XIAMEN offers LD Bare Bar for 940nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 38%
Output Power: 250W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 4″ FZ silicon ignot.
Silicon ingot, per SEMI, G 100.7±0.3mmØ,
FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-02meta-author
(11-22) Plane U-GaN Freestanding GaN Substrate
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 8″ Silicon Wafer
8″ Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Chamfer width 700-1000 μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-09-03meta-author
GaN Wafers to Fabricate LED Devices
PAM-XIAMEN offers GaN Wafers to Fabricate LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission:
Specification of GaN Wafers for LED Devices PAM200614-GAN-LED
size : 2 inch
WD : 455 ± [...]
2020-06-02meta-author
PAM XIAMEN offers ZnTe single crystal substrate.
ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp
ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp
ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40
ZnTe, N type, (110) [...]
2019-05-21meta-author