Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
PAM XIAMEN offers Wide Band Gap semiconductors.
Wide Band Gap semiconductors (WBG or WBGS) are semiconductor materials with relatively large band gaps compared to typical semiconductors. A typical semiconductor such as silicon has a band gap of 1-1.5 electron volts (eV), while a broadband gap [...]
2019-03-21meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our [...]
2017-11-30meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
What is the Growth Facet?
In the central region of SiC {0001} wafer, the doping concentration is usually relatively high, such as the dark color observed in the central region, which is due to the enhanced impurity doping in facet growth, as shown in Fig. [...]
2021-01-22meta-author
PAM XIAMEN offers Zinc Oxide on Silicon.
The following wafers work
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2 layer on 4″ Silicon wafer
Dry Oxide layer thickness: 100 nm ( 2000A) +/-10%
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Note: customized oxide layer [...]
2019-02-26meta-author