(20-21) Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • (20-21) Plane N-GaN Freestanding GaN Substrate

(20-21) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:

Item PAM-FS-GAN(20-21)-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

Inserting a low temperature n GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying [...]

2014-01-16meta-author
Test Method for Dislocation Density of Monocrystal Germanium

This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2. 1. Normative Document Citation for Determining [...]

2021-11-02meta-author
2″ Silicon Wafer-1

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]

2019-03-07meta-author
GaN-On-Si Key Patent Analysis

GaN-On-Si Key Patent Analysis   The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]

2012-12-19meta-author
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3

PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One [...]

2019-09-20meta-author
InAs (Indium Arsenide ) Wafer

Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]

2016-01-15meta-author