The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV light while has a wide transmission range in infrared band. Infrared grade germanium single crystal is the basic material for making infrared lenses, infrared window [...]
2021-09-18meta-author
PAM XIAMEN offers LSAT Crystal Substrates.
SPECIFICATIONS:
Growth method: Czochralski method
Crystal structure: Cubic
Lattice parameter: a = 3.868 A
Melt point (℃): 1840
Density: 6.74(g/cm3)
Hardness: 6.5(mohs)
Dielectric constants: 22
Thermal expansion: 10 x 10-6 /K
Available Size: 10×3,10×5,10×10,15×15,20×15,20×20,Ф15, Ф20,Ф1″ (1 inch),Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request.
Thickness: 0.5mm, 1.0mm
Polishing: Single or double, Epi-face Ra < 0.5 [...]
2019-03-13meta-author
PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging [...]
2021-04-15meta-author
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another [...]