(20-21) Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • (20-21) Plane N-GaN Freestanding GaN Substrate

(20-21) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:

Item PAM-FS-GAN(20-21)-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

Share this post

Related Posts

Au – Gold Single Crystal & Substrate

PAM XIAMEN offers high-quality Au – Gold Single Crystal & Substrate. PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface [...]

2019-04-16meta-author
Ge single crystal(Prime grade)-6

PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>. 2″ Diameter Wafer 2″ Wafers <211> Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm For more information, [...]

2019-04-25meta-author
3″ FZ Prime Silicon Wafer Thickness: 350±15um

PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um. 3″ Si epi-ready wafer Si wafer FZ Diameter: 76mm Thickness: 350±15um Dopant: P Orientation: (100) Resistivity: 500-1000 Ohm*cm Double side polished, epi-ready laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs [...]

2019-07-03meta-author
4″ Silicon Wafer-8

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 2100 P/E 1-100 SEMI Prime, Manual Edges p-type Si:B [100] 4″ 3000 P/P 1-10 SEMI Prime p-type Si:B [100] 4″ 3175 P/P 1-10 SEMI Prime, TTV<8μm p-type Si:B [100] 4″ 3200 P/E 1-100 SEMI Prime, Sealed as group of 9 wafers p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 5000 P/E 1-100 Prime, NO Flats p-type Si:B [100] 4″ 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), TTV<8μm p-type Si:B [100] ±0.2° 4″ 300 P/P 0.1-0.3 SEMI Prime p-type Si:B [100] ±1° 4″ 490 ±5 P/P 0.1-1.0 SEMI Prime, TTV<0.8μm p-type Si:B [100] 4″ 525 P/E 0.1-0.2 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.095-0.130 SEMI Prime p-type [...]

2019-03-05meta-author
THz Generation Process in LT-GaAs

THz Generation Process in LT-GaAs   Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]

2012-06-18meta-author ,
Proper In deposition amount for on demand epitaxy of InAs and GaAs single quantum dots

Abstract The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]

2017-06-14meta-author