(20-21) Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • (20-21) Plane N-GaN Freestanding GaN Substrate

(20-21) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:

Item PAM-FS-GAN(20-21)-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-20

Share this post

Related Posts

P Type Thin Germanium Wafer | Solar Cell

PAM-XIAMEN offers p type electronic grade Germanium (Ge) wafer. Germanium is a chemical element. Its chemical symbol is Ge. Its atomic number is 32 and the atomic weight is 72.64, belonging to the IVA group elements. So the germanium electron configuration must have 32 [...]

2019-03-15meta-author
Sony and Apple’s Micro-LED Display Market Strategy

Sony and Apple’s Micro-LED Display Market Strategy Sony and Apple are the key to promoting micro-LED displays on the market, but the two have diverged in display developments. The Japanese company is making large micro-LED displays, and Apple small displays, but why have both chosen micro-LEDs? [...]

2016-08-22meta-author
SiC Chip

PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips: 1. Specifications of SiC Chip Substrate No 1. PAM200508-SIC-AU 10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type. Grade: dummy Thickness: approx. 350um Backside surface: with metal films of Ti-Ni-Au Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um), No 2. SiC Wafer with [...]

2020-07-17meta-author
2″ Silicon Wafer-8

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]

2019-03-07meta-author
4″FZ Silicon Ignot-3

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]

2019-07-04meta-author
Global semiconductor market is forecasted to reach 327 billion dollar in 2016

Global semiconductor market is forecasted to reach 327 billion dollar in 2016     WSTS expects the world semiconductor market to be down 2.4% in 2016 at US$327 billion with growth returning in 2017 and 2018. For 2016, growth in Optoelectronics (1.8%), Sensors (7.6%), and Analog ICs (1%) [...]

2016-06-20meta-author