1-2.Stacking Sequence
If we are going to make a laminated structure, we must know the thickness of each ply and the angle of each ply traditionally in degrees defined from the top layer down.
2018-06-28meta-author
5-5-2 SiC-Selective Doping: Ion Implantation
The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for
maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated
long term at high temperatures. Unfortunately, this characteristic also largely [...]
2018-06-28meta-author
5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
2018-06-28meta-author
2-31.N type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
5-1 Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety [...]
2018-06-28meta-author
1-1.lattice parameter
The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
2018-06-28meta-author