PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
PAM2434 | p–type Si:B | [110] ±0.25° | 4″ | 525 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst |
PAM2435 | p–type Si:B | [110] ±0.5° | 4″ | 380 | P/P | 1–30 | SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst |
PAM2436 | p–type Si:B | [110] ±0.5° | 4″ | 750 | P/E | 1–100 | SEMI Prime (back–side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm |
PAM2437 | p–type Si:B | [100] | 4″ | 1000 | P/P | 200–700 | Prime, NO Flats, Empak cst |
PAM2438 | p–type Si:B | [100] | 4″ | 3000 | P/E | 46–50 | SEMI Prime, 1Flat, Individual cst, Group of 6 wafers |
PAM2439 | p–type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly |
PAM2440 | p–type Si:B | [100] | 4″ | 515 ±10 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
PAM2441 | p–type Si:B | [100] | 4″ | 750 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
PAM2442 | p–type Si:B | [100] | 4″ | 1000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2443 | p–type Si:B | [100] | 4″ | 1000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2444 | p–type Si:B | [100] | 4″ | 300 | P/P | 8–12 | SEMI TEST — Front–side badly polished, 2Flats, Empak cst |
PAM2445 | p–type Si:B | [100] | 4″ | 610 ±10 | E/E | 8–12 | 1Flat at [100], Empak cst |
PAM2446 | p–type Si:B | [100] | 4″ | 300 | P/P | 5–10 {6–7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm |
PAM2447 | p–type Si:B | [100] | 4″ | 300 | P/P | 5–10 {6–7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers |
PAM2448 | p–type Si:B | [100] | 4″ | 300 | P/P | 5–10 | SEMI Prime, 2Flats, Empak cst |
PAM2449 | p–type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (in Opened cassette), 2Flats, Empak cst |
PAM2450 | p–type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst |
PAM2451 | p–type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (with bad surface), 1Flat, Empak cst |
PAM2452 | p–type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 1Flat, hard cst, Back–side slightly darker than normal |
PAM2453 | p–type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee |
PAM2454 | p–type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 1Flat, in Empak |
PAM2455 | p–type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 2Flats, in Empak |
PAM2456 | p–type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken (largest piece is ~30%), 1Flat, in Empak |
PAM2457 | p–type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2458 | p–type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI, 2Flats, Empak cst |
PAM2459 | p–type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers |
PAM2460 | p–type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Test, Dirty and scratched, 2Flats, Empak cst |
PAM2461 | p–type Si:B | [100] | 4″ | 1000 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2462 | p–type Si:B | [100] | 4″ | 525 | P/E | 4.1–4.5 | Prime, NO Flats, Empak cst |
PAM2463 | p–type Si:B | [100] | 4″ | 250 ±10 | P/P | 1–5 {4.1–4.7} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2464 | p–type Si:B | [100–4.0°] ±0.5° | 4″ | 275 | P/E | 1–30 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
PAM2465 | p–type Si:B | [100] | 4″ | 300 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2466 | p–type Si:B | [100–4° towards[110]] ±0.5° | 4″ | 300 | P/E | 1–10 | SEMI Test, 2Flats, Empak cst, Wafers with pits |
PAM2467 | p–type Si:B | [100] | 4″ | 381 ±5 | P/P | 1–30 | SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst |
PAM2468 | p–type Si:B | [100] | 4″ | 475 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth |
PAM2469 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2–0.9)E16/cc per ASTM F1319, Oxygen content (9.4–8.8)E17/cc per ASTM F1188. |
PAM2470 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319. |
PAM2471 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319. |
PAM2472 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3–2.2)E16/cc per ASTM F1319, Oxygen content (7.9–7.7)E17/cc per ASTM F1188. |
PAM2473 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9–1.1)E16/cc per ASTM F1319, Oxygen content (8.4–8.0)E17/cc per ASTM F1188. |
PAM2474 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8–14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188. |
PAM2475 | p–type Si:B | [100] | 4″ | 525 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2476 | p–type Si:B | [100] | 4″ | 525 | P/P | 1–10 | SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers |
PAM2477 | p–type Si:B | [100] | 4″ | 525 | P/P | 1–10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee |
PAM2478 | p–type Si:B | [100] | 4″ | 525 | P/P | 1–5 | SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches |
PAM2479 | p–type Si:B | [100–4° towards[110]] ±0.5° | 4″ | 525 | P/E | 1–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
PAM2480 | p–type Si:B | [100] | 4″ | 525 | P/E | 1–5 | SEMI Prime, 1Flat, Empak cst |
PAM2481 | p–type Si:B | [100] | 4″ | 525 | NP/PN | 1–10 | SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides |
PAM2482 | p–type Si:B | [100] | 4″ | 525 | NOxP/POxN | 1–10 | SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst |
PAM2483 | p–type Si:B | [100–0.5°] | 4″ | 590 ±10 | E/E | 1–3 | SEMI Prime, 2Flats |
PAM2484 | p–type Si:B | [100] | 4″ | 2100 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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