100mm (4 Inch) Silicon Wafers-3

100mm (4 Inch) Silicon Wafers-3

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.

Item Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
PAM2434 p–type Si:B [110] ±0.25° 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst
PAM2435 p–type Si:B [110] ±0.5° 4″ 380 P/P 1–30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
PAM2436 p–type Si:B [110] ±0.5° 4″ 750 P/E 1–100 SEMI Prime (back–side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm
PAM2437 p–type Si:B [100] 4″ 1000 P/P 200–700 Prime, NO Flats, Empak cst
PAM2438 p–type Si:B [100] 4″ 3000 P/E 46–50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
PAM2439 p–type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
PAM2440 p–type Si:B [100] 4″ 515 ±10 P/P 10–20 SEMI Prime, 2Flats, Empak cst
PAM2441 p–type Si:B [100] 4″ 750 P/P 10–20 SEMI Prime, 2Flats, Empak cst
PAM2442 p–type Si:B [100] 4″ 1000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2443 p–type Si:B [100] 4″ 1000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2444 p–type Si:B [100] 4″ 300 P/P 8–12 SEMI TEST — Front–side badly polished, 2Flats, Empak cst
PAM2445 p–type Si:B [100] 4″ 610 ±10 E/E 8–12 1Flat at [100], Empak cst
PAM2446 p–type Si:B [100] 4″ 300 P/P 5–10 {6–7} SEMI Prime, 2Flats, Empak cst, TTV<9μm
PAM2447 p–type Si:B [100] 4″ 300 P/P 5–10 {6–7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
PAM2448 p–type Si:B [100] 4″ 300 P/P 5–10 SEMI Prime, 2Flats, Empak cst
PAM2449 p–type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
PAM2450 p–type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 2Flats, Empak cst
PAM2451 p–type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (with bad surface), 1Flat, Empak cst
PAM2452 p–type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 1Flat, hard cst, Back–side slightly darker than normal
PAM2453 p–type Si:B [100] 4″ 380 P/E 5–10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
PAM2454 p–type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 1Flat, in Empak
PAM2455 p–type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 2Flats, in Empak
PAM2456 p–type Si:B [100] 4″ 380 BROKEN 5–10 Broken (largest piece is ~30%), 1Flat, in Empak
PAM2457 p–type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2458 p–type Si:B [100] 4″ 525 P/E 5–10 SEMI, 2Flats, Empak cst
PAM2459 p–type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
PAM2460 p–type Si:B [100] 4″ 525 P/E 5–10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
PAM2461 p–type Si:B [100] 4″ 1000 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2462 p–type Si:B [100] 4″ 525 P/E 4.1–4.5 Prime, NO Flats, Empak cst
PAM2463 p–type Si:B [100] 4″ 250 ±10 P/P 1–5 {4.1–4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2464 p–type Si:B [100–4.0°] ±0.5° 4″ 275 P/E 1–30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2465 p–type Si:B [100] 4″ 300 P/P 1–10 SEMI Prime, 2Flats, Empak cst
PAM2466 p–type Si:B [100–4° towards[110]] ±0.5° 4″ 300 P/E 1–10 SEMI Test, 2Flats, Empak cst, Wafers with pits
PAM2467 p–type Si:B [100] 4″ 381 ±5 P/P 1–30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
PAM2468 p–type Si:B [100] 4″ 475 P/E 1–10 SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
PAM2469 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2–0.9)E16/cc per ASTM F1319, Oxygen content (9.4–8.8)E17/cc per ASTM F1188.
PAM2470 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
PAM2471 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
PAM2472 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3–2.2)E16/cc per ASTM F1319, Oxygen content (7.9–7.7)E17/cc per ASTM F1188.
PAM2473 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9–1.1)E16/cc per ASTM F1319, Oxygen content (8.4–8.0)E17/cc per ASTM F1188.
PAM2474 p–type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8–14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
PAM2475 p–type Si:B [100] 4″ 525 P/P 1–10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2476 p–type Si:B [100] 4″ 525 P/P 1–10 SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
PAM2477 p–type Si:B [100] 4″ 525 P/P 1–10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
PAM2478 p–type Si:B [100] 4″ 525 P/P 1–5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
PAM2479 p–type Si:B [100–4° towards[110]] ±0.5° 4″ 525 P/E 1–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2480 p–type Si:B [100] 4″ 525 P/E 1–5 SEMI Prime, 1Flat, Empak cst
PAM2481 p–type Si:B [100] 4″ 525 NP/PN 1–10 SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
PAM2482 p–type Si:B [100] 4″ 525 NOxP/POxN 1–10 SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
PAM2483 p–type Si:B [100–0.5°] 4″ 590 ±10 E/E 1–3 SEMI Prime, 2Flats
PAM2484 p–type Si:B [100] 4″ 2100 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-02-19

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