4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm

4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.

1. Specification of Prime Silicon Wafer by FZ

DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
RESISTIVITY : 5000 – 10000 Ohm.cm
With following numbering XXX= 0001 to 0050
Lasermark – along the flat on the front side
Cleaning after marking
Clean Room class 100

2. FAQ about FZ Silicon Substrate

Q1: Before epitaxy, do you have in-situ etching on your silicon surface (in order to obtain a clear epitaxy surface), and if so, what is the approximate thickness of the etching? I need to determine the injection depth based on this.

A: There is etching on silicon substrate, the thickness is about 0.1 microns.

Q2: What is the temperature for silicon growth? I need to simulate the diffusion phenomenon of injected phosphorus based on this.

A: Growth temperature of silicon is 1150℃.

Q3: Why do high-resistance silicon wafers show signs of cracks on the edges after rapid annealing at 1050℃?

A:Similar cracks are the result of stress relief caused by rapid annealing. This condition usually does not cause cracking in subsequent epitaxial growth.

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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