PBN-PG composite heater

PBN-PG composite heater

PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.

PG ribbon thickness 0.05mm

Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher

Auxiliary Heating Zones
Back surface:
Outer element R3=7.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R4=4.3 Ohm, (hot, at 1200-1300 deg.C), cold ~ x2 higher

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.


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