Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
2013-09-03meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07meta-author
We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED.
1. Features & Dimensions of UV LED Wafer
Growth Technique – MOCVD
Substrate Material:Sapphire Substrate (Al2O3)
Substrate Conduction: Insulating
Substrate [...]
The process of silicon carbide oxidation is simple. The silicon carbide substrate can be directly thermally oxidized to obtain SiO2 on the substrate. Silicon carbide is the only compound semiconductor that can obtain high-quality SiO2 through silicon carbide thermal oxidation. The theoretical formula is as follows:
SiC+1.5O2→SiO2+CO
That is, to grow 100nm [...]
2021-04-26meta-author
PAM XIAMEN offers nitride coated silicon wafers.
Stoichiometric LPCVD Nitride on Silicon Wafer Specification
Thickness range: 100Å – 4500Å
Sides processed: Both
Refractive index: 2.00 +/-.05 @632nm
Film stress: >800MPa Tensile Stress
Wafer size: 1″ -12″inches
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace
Nitride
LPCVD
PECVD
[...]
2019-02-11meta-author