PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-23meta-author
PAM-XIAMEN can supply SiC crystals, more specifications are found in https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html.
Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the [...]
2024-04-26meta-author
PAM XIAMEN offers 4″ FZ silicon ignot.
Silicon ingot, per SEMI, G 100.7±0.3mmØ,
FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-02meta-author
PAM XIAMEN offers 8″ CZ Dummy Grade Silicon Wafer.
8inch (5 pieces)
Dummy CZ-Si wafer 8 inch (+/- 0.5 mm),
thickness = 725 ± 50 µm,
0rientation (no matter) ,
polished (no matter),
p or n type (no matter) ,
? Ohm cm (no [...]
2019-06-24meta-author
The development stages of semiconductor wafers are elemental semiconductor, compound semiconductor and wide bandgap semiconductor, as shown in the Fig. 1. Semiconductor wafers can be divided into narrow band gap semiconductors and wide band gap semiconductors according to different band gaps. Wide Band Gap [...]
2019-03-21meta-author
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html
At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high [...]
2024-03-22meta-author