PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
Due to the high growth pressure and relatively low temperature, Al is not easily evaporated and lost in the liquid-phase method. Adding Al to the flux used in the liquid-phase method can easily obtain P-type silicon carbide (SiC) crystals with high carrier concentration, solving the [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst p-type Si:B [100] 3″ 300 P/P 0.5-10.0 SEMI Prime, TTV<2μm, Empak cst p-type Si:B [100] 3″ 315 P/P 0.5-10.0 SEMI Prime, TTV<3μm p-type Si:B [100] 3″ 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly) p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers p-type Si:B [100] 3″ 250 BROKEN 0.15-0.20 Broken wafers, in Epak cst p-type Si:B [100] 3″ 356 P/P 0.015-0.020 SEMI p-type Si:B [100-4° towards[110]] ±0.5° 3″ 230 P/E 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 3″ 300 P/E 0.01-0.02 SEMI Prime p-type [...]
PAM XIAMEN offers PbS single crystal. The sulfate ion is a polyatomic anion with the empirical formula SO2−4 and a molecular mass of 96.06 daltons (96.06 g/mol); it consists of a central sulfur atom surrounded by four equivalent oxygen atoms in a tetrahedral arrangement. [...]
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
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