The ultra-high voltage gate turn-off thyristor (GTO) device based on 4H-SiC, under the action of bidirectional carrier injection and conductivity modulation effects, can withstand high voltage while obtaining high pass current, meeting the requirements of ultra high power applications in terms of power density and [...]
2023-11-17meta-author
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Analytical model for event reconstruction in coplanar grid CdZnTe detectors
Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction [...]
The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1000
P/E
>5
SEMI Prime, in hard cassettes of 6, 6 & 7 wafers
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1300
P/E
>5
SEMI Prime, hard cst
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
E/E
>5
SEMI, LaserMark, in opened hard cast
n-type Si:P
[111-2.5°] ±0.5°
3″
380
P/E
1-3
SEMI Prime
n-type Si:P
[111] ±0.5°
3″
380
P/E
1-10
SEMI Primet
n-type Si:P
[111-3.0°] ±1°
3″
381
P/E
1-20 {1.7-5.7}
SEMI Test
n-type Si:P
[111] ±0.5°
3″
570
P/P
1-10
SEMI Primet
n-type Si:Sb
[111] ±0.5°
3″
380
P/E
0.019-0.026
SEMI Prime, in Empak cassettes [...]
2019-03-06meta-author