News

GaN HEMT

PAM XIAMEN offers GaN HEMT. Parmeters Specification BV 300~650 Vt(ds)(max) 800 Rds(on)max 50~350 If 5~20 Operation temp. -55~150 Qg(typ) 6~14 Vth(typ) 2.1 Package type TO220-3L TO263/TO252 DFN,QFN …   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]

GaN SBD

PAM XIAMEN offers GaN SBD. Parmeters Specification BV 300~650 If 1~20 Operation temp. -55~150 Trr <10 Package type TO220-2L TO220-3L   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]

GaN on GaN

PAM XIAMEN offers GaN on GaN. 1.1 GaN on GaN GaN Cap 3nm AlxGaN 20nm AIN 1nm GaN 0.5um Buffer layer 3um GaN substrate   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor [...]

GaN on SiC for RF

PAM XIAMEN offers GaN on SiC for RF. 1.1 GaN HEMT Structure on Sapphire for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM / XRD(002)FWHM / Sheet Resistivity 200~450 ohm/sq AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm SiN passivation layer  / GaN cap layer  / Al composition 20-30% In composition 17% for InAlN AlGaN   / AlN interlayer / GaN channel / Fe doped GaN buffer 1.6um AlN buffer [...]

GaN on Sapphire for Power

PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm SiN passivation layer  0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C doped GaN buffer / Nudeation / Substrate material Sapphire substrate   For [...]

GaN on Sapphire for RF

PAM XIAMEN offers GaN on Sapphire for RF. 1.1 GaN HEMT Structure on Sapphire for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM / XRD(002)FWHM / Sheet Resistivity / AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm siN passivation layer  0~30nm u-GaN cap layer  / Al composition 20-30% In composition 17% for InAlN AlGaN barrier layer  20~30nm  AlN spacer  / GaN buffer layer(um) / GaN channel / Fe doped [...]

GaN on Si for RF

PAM XIAMEN offers GaN on Si for RF. 1.1 GaN HEMT Structure on Silicon for RF Application Wafer size 2″, 4″, 6″,8″ AlGaN/GaN HEMT structure Refer 1.2 Carrier density >9E12 cm2 Hall mobility / Sheet Resistivity / AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=30um Edge exclusion  <5mm SiN passivation layer  0~5nm u-GaN cap layer  / Al composition 20-30% AlGaN barrier layer  / GaN channel / AlGaN buffer / AlN / Substrate material Silicon substrate Si substrate resistivity (Ω cm) > 3000 Si [...]

GaN on Si for Power, E-mode

PAM XIAMEN offers GaN on Si for Power, E-mode. 1.1 E-MODE GaN HEMT Structure on Silicon Wafer size 2″, 4″, 6″,8″ AlGaN/GaN HEMT structure Refer 1.2 Residual 2DEG density (Vg=0 V) <1e18/cm3 AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=30um Edge exclusion  <5mm p-GaN / u-GaN cap layer  / Al composition 20-30% AlGaN barrier layer  / GaN channel / AlGaN buffer / Substrate material Silicon substrate Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)   For more information, [...]

GaN on Si for Power, D-mode

PAM XIAMEN offers GaN on Si for Power, D-mode. 1.1 D-MODE GaN HEMT Structure on Silicon Wafer size 2″, 4″, 6″,8″ AlGaN/GaN HEMT structure Refer 1.2 Carrier density >9E12 cm2 Hall mobility / Sheet Resistivity / AFM RMS (nm)of 5x5um2 <0.25nm Bow(um) <=30um Edge exclusion  <5mm SiN passivation layer  0~5nm u-GaN cap layer  2nm Al composition 20-30% AlGaN barrier layer  / GaN channel / AlGaN buffer / AlN / Substrate material Silicon substrate Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)   For more information, [...]

SOS( Silicon on Sapphire)

PAM XIAMEN offers SOS( Silicon on Sapphire). Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick, Silicon-on-Sapphire (11-02, R [...]