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VCSEL Market Overview

VCSEL Market Overview At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL.  III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark Optoelectronics, and then wafer fabrication [...]

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the structures grown on (111)B substrates, [...]

The SiC and GaN power semiconductor market will exceed $10 billion by 2027!

The SiC and GaN power semiconductor market will exceed $10 billion by 2027! Key conclusions: Emerging-market silicon carbide(SiC) and gallium nitride(GaN) power semiconductors are expected to reach nearly $1 billion by 2020, driven by demand for hybrid and electric vehicles, power and photovoltaic (PV) inverters. The use of SiC and GaN power [...]

Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the delivery time and come back [...]

EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

A Glance of GaAs Wafer Market

A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for more than 50% of the [...]

Wide Bandgap Technology –Next Generation Power Devices

Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 kWh) and 2% of total [...]

Near-band-edge luminescence in heavily doped gallium arsenide

Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. It is established that even [...]

LN Thin Film on Insulator

Lithium Niobate(LN) Thin Film on Insulator Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc. Single crystal lithium niobate thin films are of great significance for the development of photonic circuits and electronic devices [...]

LNOI with Metal Electrode

Lithium Niobate(LNOI) with Metal Electrode There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric effect, ferroelectric domain switching effect, [...]