News

Enhancing the Fluorescence Brightness of Single SiC Spin Color Center

PAM-XIAMEN can supply SiC epitaxial wafers for color center research, more specifications you can find in https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Any questions, please contact the sales team: victorchan@powerwaywafer.com. The solid-state spin color center is an important system for quantum information processing, and its fluorescence brightness is an important parameter towards practical quantum applications. [...]

2024-04-30 Read more...

Research on the Structure and Physical Properties of AlN/Al2O3 Incoherent Interfaces

PAM-XIAMEN can supply AlN thin films, additional specifications please see https://www.powerwaywafer.com/2-inch-aluminum-nitride-aln-template-on-sapphire.html. 1. Research Background of Incoherent Interfaces Functional material interfaces have attracted much attention due to their often exhibiting novel physical and chemical phenomena and properties that differ from bulk materials. For example, two-dimensional electron gas, interface superconductivity, interface luminescence, and [...]

2024-04-29 Read more...

Preparation of Narrow Linewidth and High Debye Factor Single Photon Source Femtosecond Laser in AlN Crystals

AlN single crystal materials are available, please refer to the product specifications: https://www.powerwaywafer.com/aln-substrate.html. For more product information or inquiries, please contact our sales team with victorchan@powerwaywafer.com. At present, people have used AlN to prepare high Q-value resonant cavities and low loss waveguides. It has also been reported to be a single photon source [...]

2024-04-28 Read more...

Progress in Research on the Generation of Mid Infrared Femtosecond Lasers from Silicon Carbide Crystal

PAM-XIAMEN can supply SiC crystals, more specifications are found in  https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html. Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the fact that periodic level mid [...]

2024-04-26 Read more...

Progress in the TSSG Growth of Wafer Scale 3C-SiC Single Crystals

Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html. Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, and 5G communication. Compared with [...]

2024-04-26 Read more...

Theoretical Study on Near Surface Vacancies in 3C-SiC

Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple ground states and the advantage [...]

2024-04-23 Read more...

Study on A General Method for Polishing SiC Wafers to Atomic Level Flatness

Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with different crystal planes to grow [...]

2024-04-22 Read more...

Research on Compensation Effect in Al Doped P-Type 4H-SiC By PVT

PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal forms of SiC, 4H-SiC has [...]

2024-04-19 Read more...

Study on AlN Single Crystal Grown on AlN Seed Crystal

Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html. AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and chemical properties. Moreover, AlN single [...]

2024-04-18 Read more...