Energy resolution report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers PbS single crystal.
The sulfate ion is a polyatomic anion with the empirical formula SO2−4 and a molecular mass of 96.06 daltons (96.06 g/mol); it consists of a central sulfur atom surrounded by four equivalent oxygen atoms in a tetrahedral arrangement. [...]
2019-05-14meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs / InP Epitaxial Wafer in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality InP (Indium Phosphide) Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 675 um.
6” Silicon wafer
Wafer Size : 6 inch Silicon
Thickness : 675 um
Both polishing
Axial direction : <100>
Type : P/B
resistivity:1-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-06-28meta-author
Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]
2021-04-27meta-author