Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 90 n- Si:P 41±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 5±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75 n- Si:P 40±10% n/n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 25 n- Si:P 2.5±10% n/n/n+ For [...]
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 6inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 152.4mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the [...]
PAM XIAMEN offers Silicon Substrate. Below are just two items our clients use to work with 2D Materials. Si 150mm P/B <100> 0-100 ohm-cm 625um SSP Test Grade Si 100mm N/As <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]
PAM XIAMEN offers BN (h) – 2D crystal. Natural Boron Nitride Single Crystal, 0.6-1.0 mm Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than [...]
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