PAM XIAMEN offers 3″ Silicon Wafer-17 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Primary Flat length 32.5±2.5mm, orientation 110±1°。
Secondary Flat length 18±2mm, orientation 90°±5°
Sealed in Empak cassette
For [...]
2019-11-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
Military and civil authorities could benefit from secure optical communication systems that use light to carry messages between moving vehicles. Researchers at KAUST have now demonstrated rapid data transfer using ultraviolet-B (UV-B) light, which provides many advantages over visible light.
Optical communications systems using visible [...]
2018-01-05meta-author
PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates.
Single crystal SrTiO3 doped with 0.05 wt% Fe
Specifications:
Crystal Structure:Cubic
Growth Method:Vernuil Method
Lattice Parameter:a=3.905Å
Fe Doping Concentrations:0.05%
Melting Point:2080C
Density:5.122 g/ccm
Hardness:6-6.5 Mohs
Thermal expansion:10.3 x 10^-6/K
Dielectric Constant:5.2
Dielectric Loss: ~5×10^-4(300K) ~3×10^-4(77K)
Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request
Typical thickness:0.5mm or 1.0mm
Orientations:<100>、<110>、<111>
Miscut:0.5 degree
Surface Polishing:single or double [...]
2019-03-14meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um.
6″ Si wafer
DSP
N-type
<111>
thickness 500±25um
resistivity40-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01meta-author
Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all wide band gap [...]
2020-09-22meta-author