PAM XIAMEN offers Single crystal CdWO4.
CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes.
Structure
Lattice (A)
Melting Point oC
Density g/cm
Hardness (Mohn)
Thermo expansion
Refractive indexEmission wavelength (nm )
Emission wavelength [...]
2019-04-18meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author
PAM XIAMEN offers 8″Silicon As-cut Wafer
According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]
2020-06-12meta-author
The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12meta-author
Abstract
A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only [...]
2017-10-30meta-author
Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering
InGaN films were grown on (1 1 1) silicon substrates by reactive magnetron sputtering. It was demonstrated that the indium composition in the InGaN films can be controlled by varying the ratio of the applied radio-frequency [...]
2014-02-08meta-author
InGaN