PAM XIAMEN offers LD Bare Bar for 780nm@cavity 2.5mm.
Brand: PAM-XIAMEN
Wavelength: 780nm
Filling Factor: 38%
Output Power: 80W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point(℃)
1610℃
Density
2.684g/cm3
Hardness
7(mohs)
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃(300℃)
Index of refraction
1.544
Thermal expansion
α11:13.71×106 / ℃ α33:7.48×106 /℃
Frequency constant
1661(kHz/mm)
Crystal orientation
Y、X or Z,30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm
For more information, please [...]
2019-03-15meta-author
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
2021-08-06meta-author
InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be [...]
2023-02-10meta-author
PAM-XIAMEN can offer AlGaAs / GaAs p-HEMT (pseudomorphic high electron mobility transistor) heterostructure epitaxial wafer grown by MBE or MOCVD process. The heterostructure has a high-mobility conduction channel formed by two-dimensional electron gas, which is an ideal material for wireless applications. The line width [...]
2021-12-07meta-author