PAM XIAMEN offers BiFeO3 Film on (Pt/Ti/SiO2/Si).
150 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
400 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
BiFeO3 Film(400nm) on (Pt/Ti/SiO2/Si),10x10x0.5mm
For more information, please visit our website: [...]
2019-04-26meta-author
III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has [...]
2022-07-29meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author
PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.
PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working [...]
2019-04-23meta-author
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet [...]
2018-04-13meta-author
The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]
2022-03-25meta-author