PAM XIAMEN offers YAG Er Doped Yttrium Aluminium Garnet Laser Crystal.
PAM XIAMEN can supply a wide range of Er:YAG, Er doped Yttrium aluminium garnet single crystals and epi-ready crystal substrates to meet customer’s specific requirements.
Specifications:
Crystal structure: cubic
Lattice parameters: 12.01 Å
Orientations available: <111> or <100> crystalline within 5°
Melt [...]
2019-03-15meta-author
Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all wide band gap [...]
2020-09-22meta-author
Highlights
•We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron [...]
PAM XIAMEN offers GaAs (100) Te-doped crystal .
GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
2019-04-22meta-author
(LT-GaAs)Experimental Results
PAM XIAMEN offers Low Temperature GaAs.
Preparation for pump & probe measurement
Reflectance spectra measurement : we could not observe the reflectance peak.
PL spectra measurement : PL spectra were observed between 810 and 845 nm.
Pump & probe measurement (10 K)
・We have observed 0.6-1.6 picosecond decay [...]
2019-03-15meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]
2019-03-08meta-author