PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
We also [...]
2018-08-07meta-author
PAM XIAMEN offers Silicon Substrate.
Below are just two items our clients use to work with 2D Materials.
Si
150mm P/B <100> 0-100 ohm-cm 625um SSP Test Grade
Si
100mm N/As <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-02-26meta-author
PAM XIAMEN offers CdSe single crystal.
CdSe single crystal substrate, (0001) 10x10x1.0mm, 2sp Low Resistivity
CdSe single crystal
Orientation: (0001)
Type: N
Sizes: 10 x 10 +/- 0.1 mm
Thickness: 1.0 +/- 0.1 mm
Resistivities: < 1 ohm-cm
Surface Quality: two sides optical polished [...]
2019-04-19meta-author
The Silicon crystal orientations that we often hear are <100>, <110> and <111>(shown as Fig. 1), respectively indicating a crystallographic family. The single crystal silicon structure belongs to cubic crystals, and the <100> crystal orientation family represents six crystal orientations: [100], [010], [001], [100], [0-10], and [...]
2024-02-23meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.2 °
1 – 10 Ohmcm
150.0 ± 0.2 mm
600 ± 5 µm
3
6
SSP
Boron
P
111
0,0 ± 0,0
110 ± 1
0.0 ± 0.2°
25 – [...]
2019-02-25meta-author