4H Semi-insulating SiC
PAM-XIAMEN offers 4H Semi-insulating SiC with vanadium doped and undoped High-purity, semi-insulating, size from 2” to 6”.
1.The price:
PAM-XIAMEN offers the best price on the market for high quality SiC wafers and SiC crystal substrates. Our price matching policy ensures that you get the best price for SiC crystal products with comparable specifications.
2.Custom:
SiC crystal products can be customized to meet the special requirements and specifications of customers, for instance, we provide cutting service to 10mm x 10mm slices, see below example please:
4H semi-insulating SIC,5mm*5mm, 10mm*10mm with 330μm thickness;
4H semi-insulating SIC,15mm*15mm, 20mm*20mm 330μm thickness;
3. Specification:
No.1: 2” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.2: 2” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPD＜15 cm-2
B Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPD＜15 cm-2
B Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.3: 3” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.4: 3” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.5: 4” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.6: 4” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.7: 6” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD＜50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
No.8: 6” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD＜15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4.Application of 4H Semi-insulating SiC crystal substrate and wafer
Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon carbide – based devices have been used for short – wavelength photoelectricity, high – temperature, anti – radiation applications. High power and high frequency electronic devices made from SiC are superior to those based on Si and GaAs, and 4H Semi-insulating SiC wafers are mainly used in Power device and RF device.