4H Semi-insulating SiC

4H Semi-insulating SiC

PAM-XIAMEN offers 4H Semi-insulating SiC with vanadium doped and undoped High-purity, semi-insulating, size from 2” to 4”.

The price:

PAM-XIAMEN offers the best price on the market for high quality SiC wafers and SiC crystal substrates. Our price matching policy ensures that you get the best price for SiC crystal products with comparable specifications.

Custom:

SiC crystal products can be customized to meet the special requirements and specifications of customers, for instance, we provide cutting service to 10mm x 10mm slices.

Application of SiC crystal substrate and wafer

Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon carbide – based devices have been used for short – wavelength photoelectricity, high – temperature, anti – radiation applications. High power and high frequency electronic devices made from SiC are superior to those based on Si and GaAs. The following are some common applications of SiC substrates.

III-V nitride deposition

GaN, alxga1-xn and inyga1-yn epitaxial layers on SiC or sapphire substrates or for HEMT structure.

Gallium nitride epitaxy on the SiC template is used to make blue light-emitting diodes (blue leds) and near-solar-blind UV photodetectors

Photoelectric device

SiC – based devices have low – lattice mismatch with group III nitride epitaxial layers. They have high thermal conductivity and can be used to monitor the combustion process and various uv detection.

SiC – based semiconductor devices can operate in very harsh environments, such as high temperature, high power and high radiation conditions.

High power equipment

SiC has the following characteristics:

Wide band gap

High power breakdown

High saturation drift velocity

High thermal conductivity

SiC is used to manufacture very high voltage and high power devices such as diodes, power converters and high power microwave devices. Compared with traditional Si devices, power devices based on SiC have higher switching speed, higher voltage, lower parasitic resistance, and smaller size, and require less cooling due to high temperature capability.

SiC has higher thermal conductivity than GaAs or Si, which means that SiC devices can theoretically operate at higher power densities than GaAs or Si. When high power is the key expected device characteristic, the combination of higher thermal conductivity with broadband gap and high critical field gives SiC semiconductor an advantage.

At present, silicon carbide (SiC) is widely used in high power MMIC

Applications. SiC is also used as an epitaxial substrate for GaN growth and for even higher power MMIC devices

High temperature equipment

Because SiC has high thermal conductivity, SiC dissipates heat faster than other semiconductor materials. This enables the SiC device to operate at high power levels and still dissipates a large amount of excess heat generated by the device.

High frequency power device

SiC – based microwave electronic equipment for wireless communication and radar.

SILICON CARBIDE MATERIAL PROPERTIES
 Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9
4H SIC,SEMI-INSULATING, 3WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiCSubstrate
Polytype 4H 
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type semi-insulating
Dopant V
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm
4H semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm
4H semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: 
4H Semi-insulating Thickness:330μm/430μm or custom

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