4H Semi-insulating SiC
PAM-XIAMEN offers 4H Semi-insulating SiC with vanadium doped and undoped High-purity, semi-insulating, size from 2” to 6”.
1.The price:
PAM-XIAMEN offers the best price on the market for high quality SiC wafers and SiC crystal substrates. Our price matching policy ensures that you get the best price for SiC crystal products with comparable specifications.
2.Custom:
SiC crystal products can be customized to meet the special requirements and specifications of customers, for instance, we provide cutting service to 10mm x 10mm slices, see below example please:
4H semi-insulating SIC,5mm*5mm, 10mm*10mm with 330μm thickness;
4H semi-insulating SIC,15mm*15mm, 20mm*20mm 330μm thickness;
3. Specification:
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPD<15 cm-2
B Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm