Test grade silicon wafers-8

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150.0 ± 0.2 mm 600 ± 5 µm 3
6 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 25 – 75 Ohmcm 150 ± 0.2 mm 1000 ± 15 µm
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.007 – 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 15 60
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 45 6 45
6 SSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1 – 100 Ohmcm 150 ± 0.5 mm 1000 ± 25 µm 10
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 150 ± 0.2 mm 500 ± 10 µm
6 SSP Boron P+ 100 47,5 ± 1,5 110 ± 1 0.0 ± 1.0 ° < 5 mOhmcm 150 ± 0.15 mm 625 ± 15 µm 20 10
6 SSP Boron P+ 111 57,5 ± 2,5 011 ± 0,50 0.0 ± 0.2° 0.005 – 0.020 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 20 4 40
6 SSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1 – 100 Ohmcm 150 ± 0.5 mm 1000 ± 25 µm 10
6 SSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1 – 100 Ohmcm 150 ± 0.5 mm 1000 ± 25 µm 10
6 SSP Boron P+ 111 57,5 ± 2,5 011 ± 0,50 0.0 ± 0.2° 0.005 – 0.020 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 20 4 50
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° > 0.01 Ohmcm 150 ± 0.2 mm 1300 ± 25 µm
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  20.00 ±  2.50 mm 2.0 ± 1.0 ° 5.0 – 7.0 Ohmcm 150 ± 0.5 mm 635 ± 25 µm 38 12
6 SSP Boron P+ 100 57,5 ± 1,0 100 ± 1 0.0 ± 1.0 ° 0.001 – 0.004 Ohmcm 150.0±0.2 mm 675 ± 15 µm 10 60
6 SSP Boron P 100 47,5 ± 2,5 110 ± 0,50 {0TT} 4.0 ± 0.5° 3.5 – 7.0 Ohmcm 150 ± 0.2 mm 625 ± 15 µm
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  20.00 ±  2.50 mm 2.0 ± 1.0 ° 5.0 – 7.0 Ohmcm 150 ± 0.5 mm 635 ± 25 µm 38 12
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 675 ± 15 µm
6 SSP Boron P+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.007 – 0.025 Ohmcm 150 ± 0.5 mm 625 ± 15 µm
6 SSP Boron P+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.010 – 0.020 Ohmcm 150 ± 0.5 mm 508 ± 15 µm 60
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0 ± 0.5 ° 80 – 120 Ohmcm 150 ± 0.5 mm 675 ± 25 µm 60 10 60
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 40 – 60 Ohmcm 150.0 ± 0.5 mm 675 ± 25 µm
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 150 ± 0.2 mm 675 ± 15 µm 5
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 0.0 ± 0.3 ° 10 – 50 Ohmcm 150 ± 0.5 mm 1000 ± 25 µm
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 0 ± 0.3 ° 10 – 50 Ohmcm 150 ± 0.2 mm 675 ± 25 µm
6 SSP Phosphorus N 100 57,5 ± 2,0 110 ± 0,50 0 ± 1° 31.5 – 38.5 Ohmcm 150.0 ± 0.5mm 625 ± 15 µm 40 5 40
6 SSP Phosphorus N 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5 ° 2 – 7 Ohmcm 150 ± 0.3 mm 380 ± 15 µm 40 10 40
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1.7 – 2.3 Ohmcm 150 ± 0.2 mm 675 ± 15 µm 6 50
6 SSP Phosphorus N 111 57,5 ± 2,5 011 ± 1 0.0 ± 0.5° 3 – 5 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 40 10 40
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.45 – 0.75 Ohmcm 150 ± 1.0 mm 675 ± 15 µm 10 40
6 SSP Phosphorus N 111 57,5 ± 2,5 110 ± 1   45 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 1.5 ° 5.5 – 30.0 Ohmcm 150 ± 0.5 mm 635 ± 25 µm 38 12
6 SSP Phosphorus N 100 57,5 ± 2,5 011 ± 0,50 0.0 ± 0.5 ° 9 – 13 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 35 5 35
6 SSP Phosphorus N 111 57,5 ± 2,5 110 ± 1   45 ±   5.0 °,  37.50 ±  2.50 mm 0.5 ± 0.5° 77 – 97 Ohmcm 150 ± 0.25 mm 380 ± 10 µm 15 40
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 5 ± 2 Ohmcm 150 ± 0.2 mm 625 ± 20 µm 5
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 10.5 – 19.5 Ohmcm 150 ± 0.5 mm 1300 ± 25 µm
6 SSP Phosphorus N 100 47,5 ± 1,0 100 ± 1 0.0 ± 0.5° 55 Ohmcm ± 8 % 150 ± 0.2 mm 625 ± 15 µm 4,5 70
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 1 – 10 Ohmcm 150 ± 0.5 mm 575 – 600 µm
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 5 ± 2 Ohmcm 150 ± 0.2 mm 625 ± 20 µm
6 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1- 5 Ohmcm 150 ± 0.2 mm 625 ± 25 µm 50 10 50
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.6° 10.5 – 19.5 Ohmcm 150 ± 0.2 mm 1300 ± 25 µm 10
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1.7 – 2.3 Ohmcm 150 ± 0.2 mm 675 ± 15 µm
6 SSP Phosphorus N 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 3.0-9.0 Ohmcm 150.0 ± 0.2 mm 675 ± 20 µm 60 10 60
6 SSP Red Phos. N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° <1.5 mOhmcm 150.0 ± 0.2mm 675 ± 10 µm 60 10 60
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 1.0° 0.015 – 0.020 Ohmcm 150 ± 0.2 mm 400 ± 15 µm
6 SSP Red Phos. N+ 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 1.0° 0.015 – 0.020 Ohmcm 150 ± 0.2 mm 400 ± 15 µm
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 350 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 350 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 234.5 ± 12.5 µm 40 5 60
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 234.5±12.5µm 5 60
6 SSP Red Phos. N+ 111 57,5 ± 2,5 011 ± 1 3.0 ± 0.5° 0.0011-0.0015 Ohmcm 150 ± 0.3 mm 260 ± 15 µm 60 10 60

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

Share this post