Test grade silicon wafers-8

Test grade silicon wafers-8

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

InchesCust classDopantTypeOrientationPFL lengthPFL directionSFLOff orientationResistivityDiameterThicknessBowTTVWarp
6SSPBoronP10057,5 ± 2,5110 ± 0,200.0 ± 0.2 °1 – 10 Ohmcm150.0 ± 0.2 mm600 ± 5 µm3
6SSPBoronP1110,0 ± 0,0110 ± 10.0 ± 0.2°25 – 75 Ohmcm150 ± 0.2 mm1000 ± 15 µm
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.007 – 0.020 Ohmcm150 ± 0.2 mm625 ± 15 µm1560
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 0.5°0.01 – 0.02 Ohmcm150 ± 0.5 mm380 ± 15 µm45645
6SSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0 °1 – 100 Ohmcm150 ± 0.5 mm1000 ± 25 µm10
6SSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 5 Ohmcm150 ± 0.2 mm500 ± 10 µm
6SSPBoronP+10047,5 ± 1,5110 ± 10.0 ± 1.0 °< 5 mOhmcm150 ± 0.15 mm625 ± 15 µm2010
6SSPBoronP+11157,5 ± 2,5011 ± 0,500.0 ± 0.2°0.005 – 0.020 Ohmcm150 ± 0.2 mm675 ± 25 µm20440
6SSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0 °1 – 100 Ohmcm150 ± 0.5 mm1000 ± 25 µm10
6SSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0 °1 – 100 Ohmcm150 ± 0.5 mm1000 ± 25 µm10
6SSPBoronP+11157,5 ± 2,5011 ± 0,500.0 ± 0.2°0.005 – 0.020 Ohmcm150 ± 0.2 mm675 ± 25 µm20450
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 0.5 °> 0.01 Ohmcm150 ± 0.2 mm1300 ± 25 µm
6SSPBoronP10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  20.00 ±  2.50 mm2.0 ± 1.0 °5.0 – 7.0 Ohmcm150 ± 0.5 mm635 ± 25 µm3812
6SSPBoronP+10057,5 ± 1,0100 ± 10.0 ± 1.0 °0.001 – 0.004 Ohmcm150.0±0.2 mm675 ± 15 µm1060
6SSPBoronP10047,5 ± 2,5110 ± 0,50{0TT} 4.0 ± 0.5°3.5 – 7.0 Ohmcm150 ± 0.2 mm625 ± 15 µm
6SSPBoronP10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  20.00 ±  2.50 mm2.0 ± 1.0 °5.0 – 7.0 Ohmcm150 ± 0.5 mm635 ± 25 µm3812
6SSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °0.01 – 0.02 Ohmcm150 ± 0.2 mm675 ± 15 µm
6SSPBoronP+10047,5 ± 2,5110 ± 10.0 ± 1.0°0.007 – 0.025 Ohmcm150 ± 0.5 mm625 ± 15 µm
6SSPBoronP+10047,5 ± 2,5110 ± 10.0 ± 1.0°0.010 – 0.020 Ohmcm150 ± 0.5 mm508 ± 15 µm60
6SSPBoronP10057,5 ± 2,5110 ± 10 ± 0.5 °80 – 120 Ohmcm150 ± 0.5 mm675 ± 25 µm601060
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5 °40 – 60 Ohmcm150.0 ± 0.5 mm675 ± 25 µm
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 1.0°1 – 10 Ohmcm150 ± 0.2 mm675 ± 15 µm5
6SSPBoronP11157,5 ± 2,5110 ± 10.0 ± 0.3 °10 – 50 Ohmcm150 ± 0.5 mm1000 ± 25 µm
6SSPBoronP11157,5 ± 2,5110 ± 10 ± 0.3 °10 – 50 Ohmcm150 ± 0.2 mm675 ± 25 µm
6SSPPhosphorusN10057,5 ± 2,0110 ± 0,500 ± 1°31.5 – 38.5 Ohmcm150.0 ± 0.5mm625 ± 15 µm40540
6SSPPhosphorusN11157,5 ± 2,5011 ± 13.0 ± 0.5 °2 – 7 Ohmcm150 ± 0.3 mm380 ± 15 µm401040
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0 °1.7 – 2.3 Ohmcm150 ± 0.2 mm675 ± 15 µm650
6SSPPhosphorusN11157,5 ± 2,5011 ± 10.0 ± 0.5°3 – 5 Ohmcm150 ± 0.5 mm380 ± 15 µm401040
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.45 – 0.75 Ohmcm150 ± 1.0 mm675 ± 15 µm1040
6SSPPhosphorusN11157,5 ± 2,5110 ± 1  45 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 1.5 °5.5 – 30.0 Ohmcm150 ± 0.5 mm635 ± 25 µm3812
6SSPPhosphorusN10057,5 ± 2,5011 ± 0,500.0 ± 0.5 °9 – 13 Ohmcm150 ± 0.2 mm625 ± 15 µm35535
6SSPPhosphorusN11157,5 ± 2,5110 ± 1  45 ±   5.0 °,  37.50 ±  2.50 mm0.5 ± 0.5°77 – 97 Ohmcm150 ± 0.25 mm380 ± 10 µm1540
6SSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °5 ± 2 Ohmcm150 ± 0.2 mm625 ± 20 µm5
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 0.5°10.5 – 19.5 Ohmcm150 ± 0.5 mm1300 ± 25 µm
6SSPPhosphorusN10047,5 ± 1,0100 ± 10.0 ± 0.5°55 Ohmcm ± 8 %150 ± 0.2 mm625 ± 15 µm4,570
6SSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.2°1 – 10 Ohmcm150 ± 0.5 mm575 – 600 µm
6SSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °5 ± 2 Ohmcm150 ± 0.2 mm625 ± 20 µm
6SSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 1.0°1- 5 Ohmcm150 ± 0.2 mm625 ± 25 µm501050
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 0.6°10.5 – 19.5 Ohmcm150 ± 0.2 mm1300 ± 25 µm10
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0 °1.7 – 2.3 Ohmcm150 ± 0.2 mm675 ± 15 µm
6SSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0 °3.0-9.0 Ohmcm150.0 ± 0.2 mm675 ± 20 µm601060
6SSPRed Phos.N+10057,5 ± 2,5110 ± 10.0 ± 1.0 °<1.5 mOhmcm150.0 ± 0.2mm675 ± 10 µm601060
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm400 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm380 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,5110 ± 0,500.0 ± 1.0°0.015 – 0.020 Ohmcm150 ± 0.2 mm400 ± 15 µm
6SSPRed Phos.N+10047,5 ± 2,5110 ± 0,500.0 ± 1.0°0.015 – 0.020 Ohmcm150 ± 0.2 mm400 ± 15 µm
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm350 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm350 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm234.5 ± 12.5 µm40560
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm234.5±12.5µm560
6SSPRed Phos.N+11157,5 ± 2,5011 ± 13.0 ± 0.5°0.0011-0.0015 Ohmcm150 ± 0.3 mm260 ± 15 µm601060

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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