The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
PAM XIAMEN offers Silicon Nitride film on Silicon Wafer.
Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm
Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-29meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
675
P/E
1-100
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
800
E/E
1-50
SEMI, 1Flat (57.5mm), TTV<5μm
p-type Si:B
[100]
6″
320
P/E
0.001-0.030
JEIDA Prime
p-type Si:B
[100]
6″
675
P/P
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
675
P/E
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[111-4.0°] ±0.5°
6″
625
P/E
4-15 {7.1-8.8}
SEMI Prime, 1 JEIDA Flat(47.5mm)
p-type Si:B
[111] ±0.5°
6″
675
E/E
0.010-0.025
SEMI, 1Flat (57.5mm)
n-type Si:P
[100]
6″
925 ±15
E/E
5-35 {12.5-29.7}
JEIDA Prime, TTV<5μm
n-type Si:P
[100]
6″
675
P/E
2.7-4.0
SEMI Prime
n-type Si:P
[100]
6″
250 ±5
P/P
1-3
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm
Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate
Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm
2.Substrate spec:
Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: [...]
2019-04-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM-XIAMEN can supply SiC crystals, more specifications are found in https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html.
Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the [...]
2024-04-26meta-author