PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Abstract The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
PAM XIAMEN offers Single crystal CdWO4. CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes. Structure Lattice (A) Melting Point oC Density g/cm Hardness (Mohn) Thermo expansion Refractive indexEmission wavelength (nm ) Emission wavelength [...]
We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]
PAM XIAMEN offers Sodium-bismuth tungstate (NaBi(WO4)2. Sodium-bismuth tungstate (NaBi(WO4)2 or NBWO) is a scintillator material possessing very high optical quality, high density and radiation hardness. Due to these properties NBWO crystals are widely used in quantum electronics, acousto-optics and high-energy physics, in particular, in [...]
V-shaped defects in InGaN/GaN multiquantum wells InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
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