PAM XIAMEN offers InAs Indium Arsenide Single Crystal.

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Find indium arsenide for sale here today.

Available Orientations: <100>, <111>, <411>, <511> and other orientations
Available Sizes: 5×5, 10*10, 2 inch diameter, 30 mm diameter.
Doping Options: Undoped, S doping, Zn doped, and Sn doped.

                              Physical Properties
Chemical formula InAs
Molar mass 189.740 g/mol
Density 5.67 g/cm3
Melting point 942 °C (1,728 °F; 1,215 K)
Band gap 0.354 eV (300 K)
Electron mobility 40000 cm2/(V*s)
Thermal conductivity 0.27 W/(cm*K) (300 K)
Refractive index(nD) 3.51
Crystal structure Zinc Blende
Lattice constant a = 6.0583 Å

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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