Impact of substrate off-angle on the m-plane GaN Schottky diodes

  • Home
  • News
  • Impact of substrate off-angle on the m-plane GaN Schottky diodes

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward $[000\bar{1}]$. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm−3) and carbon (>1016 cm−3) impurities. The residual carbon and oxygen impurities decreased to <1016 cm−3 when the off-angle of the m-plane GaN substrate was increased. The leakage current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2019-12-16

Share this post

Related Posts

Mo-Coated Sodalime Glass

PAM XIAMEN offers Mo-Coated Sodalime Glass. Mo-coated Sodalime Glass, 100 mm(L) x 100 mm(W) x 1.1 mm thk Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th – Mo-coated Glass Mo-coated Sodalime Glass, 25 mm(L) x 25 mm(W) x 0.7 mm [...]

2019-04-28meta-author
ITO coated(sodalime) glass

PAM XIAMEN offers ITO coated(sodalime) glass. ITO  Physical properties Melting point 1800–2200 K (1526-1926 °C) (2800–3500 °F) Density 7120–7160 kg/m3 at 293 K Color (in powder form) Pale yellow to greenish yellow, depending on SnO2 concentration Values vary with composition. SI units and STP are used except where noted.   ITO Coated Glass, 10mmx10mmx 0.7mm ITO Coated Glass Substrate 10mm x 10 mm x [...]

2019-04-28meta-author
Progress in bulk GaN growth

Progress in bulk GaN growth* Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]

2018-05-29meta-author
GaN Wafer

GaN Wafer Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie: GaN substrate wafer GaN on sapphire GaN on silicon HEMT wafer AlN/GaN on sapphire AlGaN/GaN on sapphire Here is relative information of GaN wafer: GaN wafer price/GaN wafer cost: But [...]

2014-04-22meta-author
GaN Substrates Offer High Performance At A Price

GaN Substrates Offer High Performance At A Price   GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to [...]

2013-03-21meta-author
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

Highlights •Effects of atomic step width on the removal of sapphire and SiC wafers are studied. •The reason of effects of step width on the removal and the model are discussed. •CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed. •The variations of atomic [...]

2015-10-28meta-author