Impact of substrate off-angle on the m-plane GaN Schottky diodes

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward $[000\bar{1}]$ . The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>10¹⁷ cm⁻³) and carbon (>10¹⁶ cm⁻³) impurities. The residual carbon and oxygen impurities decreased to <10¹⁶ cm⁻³ when the off-angle of the m-plane GaN substrate was increased. The leakage current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2019-12-16

Related Posts

6″FZ Prime Silicon Wafer-3

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3 6″ FZ Si wafer, 75pcs Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Life time : > 1000 μs Thickness: 400 ± 25 μm Carbon (atm/cm3): <2.0 x 1016 Oxygen (atm/cm3): < 2 x 1016 Diameter: 150 mm Primary flat: Semi Std Secondary flat: not essential Front and back side Finish: [...]

2020-04-23meta-author

LBIC investigation of impurity-dislocation interaction in FZ silicon wafers

In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]

2015-06-21meta-author silicon wafer resistance, silicon wafer thickn, silicon wafers

Graded InGaN Enlightens Us On Molecular Interactions

A gradient is a material that has a specific molecule on its surface, with the concentration of the molecule sloping from a high concentration on one end to a low concentration at the other end. The gradient is used not only to determine whether [...]

2013-09-02meta-author InGaN substrate

SPECT, γ-imaging Detector

SPECT, γ-imaging Detector PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel center-to-center space 1.6mm Pixel array 16×16 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV!~700MeV Energy resolution(22℃) Average<6%@122KeV (>13% means defective pixel) Photo-Peak Efficiency(PPE) Average>40% Defined [...]

2019-04-24meta-author

4H SiC Epitaxial Wafers

PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is 4 and 6 [...]

2021-05-17meta-author

4 inch Test Grade Silicon Wafer with Single Side Polished

PAM-XIAMEN can offer 4 inch test grade silicon wafer with single side polished. The parameters for 4″-SSP Si wafer at test grade are as follows: 1. Parameters of Si Single Crystal Wafer at Test Grade PAM-210310-Si wafer Sl No Item Specifications 1 Growing Method CZ 2 Wafer Diameter 100±0.5 mm 3 Wafer Thickness 525±25 μm 4 Wafer Surface Orientation <100>±0.5º 5 Type P type 6 Dopant Boron 7 Dislocation Density Less than 5000/cm2 8 Resistivity 2-8 [...]

2021-04-14meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.