Highlights
•Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells.
•Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS.
•The projected widths of the interface layers [...]
PAM XIAMEN offers MgAl2O4 ( spinel ) single crystals.
MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. [...]
2019-05-10meta-author
PAM XIAMEN offers Silver Conductive Film.
Planarized Silver Nanowire Film(230mm W x 1 M L x 125 microns, 12 ohm/sq )on Heat Stabilized PET for thin film applications – Ag-PET-12K-1
Planarized silver nanowire film on heat stabilized PET for thin film applications
Width 9in./230mm [...]
2019-04-26meta-author
PAM-XIAMEN offers 4 inch Blue LED Wafer
Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years.
“We have established the production process based [...]
PAM-XIAMEN offers (20-2-1) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-2-1)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-09-02meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]