FREE STANDING GAN SINGLE CRYSTAL SUBSTRATES

FREE STANDING GAN SINGLE CRYSTAL SUBSTRATES

PAM XIAMEN offers Free Standing GaN Single Crystal Substrates with LED grade and LD grade for research or mass production, and our GaN crystal substrates has low dislocation density<=10^5 /cm2 without visible micro defects, the substrate has uniform smooth surface for epi-growth. Below carrier type are available: N-type, P-type, Semi-insulating, orientation includes C-plane, M-plane, A-plane,etc. Size from 5*10mm2 square to 4 inch diameter. Please see below spec list:

1. Specifications of Freestanding GaN Substrates

On-Axis 4 inch Freestanding Undoped GaN Single Crystal Substrates, Epi-ready
On-Axis 4 inch Freestanding Si-doped GaN Single Crystal Substrates, Epi-ready
On-Axis 4 inch Freestanding Fe-doped Semi-insulating GaN Single Crystal Substrates, Epi-ready
On-Axis 2 inch Freestanding Undoped GaN Single Crystal Substrates, Epi-ready
On-Axis 2 inch Freestanding Si-doped GaN Single Crystal Substrates, Epi-ready
On-Axis 2 inch Freestanding Fe-doped Semi-insulating GaN Single Crystal Substrates, Epi-ready

On-Axis 10*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
On-Axis 10*10mm2 Si-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
On-Axis 10*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
A Plane 5*10mm2 Undoped  Freestanding GaN Single Crystal Substrates, Epi-ready
A Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
A Plane 5*10mm2 Semi-insulating Freestanding GaN Single Crystal Substrates, Epi-ready
M Plane 5*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
M Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
M Plane 5*10mm2 Semi-insulating Freestanding GaN Single Crystal Substrates, Epi-ready
(10-11) Plane 5*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
(10-11) Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
(10-11) Plane 5*10mm2 Semi-insulating  Freestanding GaN Single Crystal Substrates, Epi-ready
(11-22) Plane 5*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
(11-22) Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
(11-22) Plane 5*10mm2 Semi-insulating Freestanding GaN Single Crystal Substrates, Epi-ready
(20-21) Plane 5*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
(20-21) Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
(20-2-1) Plane 5*10mm2 N-GaN Freestanding GaN Single Crystal Substrates, Epi-ready
(20-21) Plane 5*10mm2 Semi-insulating Freestanding GaN Single Crystal Substrates, Epi-ready
(20-2-1) Plane 5*10mm2 Undoped Freestanding GaN Single Crystal Substrates, Epi-ready
(20-2-1) Plane 5*10mm2 Semi-insulating Freestanding GaN Single Crystal Substrates, Epi-ready

2. FAQ of Free Standing GaN Wafers

Q1: What is the approximate bending radius of crystal face of freestanding GaN? Because the bow of silicon wafer generally refers to the bending of the physical plane of the wafer, and if GaN is prepared by HVPE method, there will be warping of the crystal plane, and the c plane is not flat. In fact, I want to ask what kind of bow value is? Is it the definition of silicon wafer or the definition of GaN wafer?

A: The bending radius of crystal face of freestanding GaN is generally expressed as BOW<25UM. The BOW of GaN wafer refers to the BOW of silicon wafer, and the crystal plane bending is not the same as the BOW.

Q2: What method is used to measure the defect density of FS GaN wafer?

A: The defect density of free standing GaN wafer is measured by CL means.

Q3: Are your GaN freestanding substrates made by HVPE method?

A: Yes, the GaN FS substrates are grown by HVPE.

For more information, please contact us email at [email protected] and [email protected].

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