GaAs (100) crystal-3

PAM XIAMEN offers GaAs(100) Si- doped crystal .

GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 2sp,cc: (1.07-3.89) x 10^18 /cm^3
GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 1sp,cc: (1.65-3.59) x 10^18 /cm^3
GaAs , Growing Method: VGF(100) Si doped, N-type, 2″ dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
GaAs , Growing Method: VGF(100) Si doped, N-type, 3″ dia x 0.625mm, 2sp,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3
GaAs , Growing Method: VGF(100) Si doped, N-type, 4″ dia x 0.625mm, 2sp,Carrier Concentration: (1.47-3.78) x 10^18 /cm^3
VGF-GaAs (100) N-type Si doped 2″ dia x 0.5 mm, 1sp,cc:(7.2-11.7) x 10^17/cm^3
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.