GaN SBD

PAM XIAMEN offers GaN SBD.

Parmeters	Specification
BV	300~650
I_f	1~20
Operation temp.	-55~150
Trr	<10
Package type	TO220-2L TO220-3L

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

2019-05-17

Related Posts

50.8mm (2 Inch) Silicon Wafers-5

PAM XIAMEN offers 50.8mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2179 p-type Si:B [100] 2″ 300 P/E 1–10 SEMI Prime, 2Flats, hard cst PAM2180 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst PAM2181 p-type Si:B [100] 2″ 500 P/E 1–2 SEMI Prime, 2Flats, hard cst PAM2182 p-type Si:B [100] 2″ 900 P/E/P 1–10 SEMI Prime, 2Flats, hard cst PAM2183 p-type Si:B [100] 2″ 2000 P/P 1–10 SEMI Prime, 2Flats, Individual cst PAM2184 p-type Si:B [100] 2″ 2000 P/E 1–10 SEMI Prime, [...]

2019-02-18meta-author

Thermal Oxide Wafers, 2 – 4″ Research Grade-3

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]

2019-05-20meta-author

enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]

2014-07-13meta-author lt gaas wafer, LT-GaAs, lt-gaas photoconductive switch

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was [...]

2013-11-19meta-author LT-GaAs, Nd:YVO4, QML

Silicon Wafer Thickness:1000μm

PAM XIAMEN offers Silicon Wafer Thickness:1000μm. Silicon Wafer ,6in Si Wafer,P/Boron <111> ON +-1°, 0.01-0.02 Ohm-cm, Thickness 1000μm, SSP, PRIME -Si Wafers, Single SidePolished/Etched Back, Primary Semi Std Flat, Surface Roughness <1nm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-08-22meta-author

Test grade silicon wafers-11

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60 8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 3.5 – 7.0 Ohmcm 200 ± [...]

2019-02-25meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.