PAM XIAMEN offers GaN Template on Sapphire& Silicon.
No.1: Doped GaN Template on Sapphire
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN (0001) Template on Sapphire [...]
2019-04-28meta-author
PAM XIAMEN offers 4″ LiNbO3 thin film on Silicon Wafer
LiNbO3/Silicon Wafer
Good Description:Lithium Niobate layer on Silicon Wafer with No Interlayer:LN thin film on Si Wafer
Top Layer: Lithium Niobate Single Crystal Thin Film, Y-cut, Thickness5μm
Substrate: 4″ Silicon Wafer, Thickness0.5mm
High Resistivity >10,000Ωcm for [...]
2020-03-10meta-author
PAM XIAMEN offers GaN on GaN.
1.1 GaN on GaN
GaN Cap 3nm
AlxGaN 20nm
AIN 1nm
GaN 0.5um
Buffer layer 3um
GaN substrate
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-05-17meta-author
Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage [...]
2018-12-25meta-author